11 July 2000 Temperature dependence of the hysteresis for the a-Si:H gate pH-ISFET
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Abstract
In application of the pH-ISFET, the hysteresis and temperature effects are two important influences of accuracy. There have been many studies about the above subjects, however, the hysteresis behaviour will change with the temperature and affect the reproducibility of the devices. Hence, we study the temperature dependence of the hysteresis behaviour for the pH-ISFET with a-Si:H gate insulator deposited by the PE-LPCVD system in this paper. The thickness of the a-Si:H was about 2000 A. The temperature is controlled by the P.I.D. temperature controlled system and the hysteresis behaviour is measured by the constant voltage-constant current circuit and voltage-time recorder. The measurement is completed at 25 degree(s)C, 35 degree(s)C, 45 degree(s)C and 55 degree(s)C and the time after the pH changed is 4 min, The experimental results also compared with other materials of the gate insulator for pH-ISFET at the room temperature.
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Jung Chuan Chou, Jung Chuan Chou, Hsjian-Ming Tsai, Hsjian-Ming Tsai, Yii Fang Wang, Yii Fang Wang, } "Temperature dependence of the hysteresis for the a-Si:H gate pH-ISFET", Proc. SPIE 4078, Optoelectronic Materials and Devices II, (11 July 2000); doi: 10.1117/12.392126; https://doi.org/10.1117/12.392126
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