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11 July 2000 Temperature-dependent optical properties of InGaN semiconductor materials: experimental and numerical studies
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Abstract
The InGaN semiconductor materials have important applications in short-wavelength light emitting diodes and semiconductor lasers. In this work, we study the optical properties of a single quantum well and a multiple quantum well InGaN devices experimentally with a photoluminescence measurement system and numerically wiht a commercial Lastip simulation program. Important optical parameters such as the peak wavelength, the emission intensity, and the bandwidth of the photoluminescence spectra at various temperatures and pump power levels are characterized and compared to the results obtained from the Lastip numerical simulation. The effects of the indium concentration in quantum well, the well width, and the bowing parameter on the optical properties of the InGaN quantum well structures are also studied numerically with the Lastip simulation program. Good agreement between the experimental and numerical results is observed.
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Yen-Kuang Kuo, JihYuan Chang, KuoKai Horng, YaLien Huang, Yuni Chang, and HsuChing Huang "Temperature-dependent optical properties of InGaN semiconductor materials: experimental and numerical studies", Proc. SPIE 4078, Optoelectronic Materials and Devices II, (11 July 2000); https://doi.org/10.1117/12.392191
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