Amorphous-silicon thin film transistor with two-step exposure process

Pi-Fu Chen; Jr-Hong Chen; Dou-I Chen; HsixgJu Sung; June-Wei Hwang; I-Min Lu

doi:10.1117/12.389409

30 June 2000 Amorphous-silicon thin film transistor with two-step exposure process

Pi-Fu Chen, Jr-Hong Chen, Dou-I Chen, HsixgJu Sung, June-Wei Hwang, I-Min Lu

Proceedings Volume 4079, Display Technologies III; (2000) https://doi.org/10.1117/12.389409
Event: Photonics Taiwan, 2000, Taipei, Taiwan

Abstract

The two-step-exposure (TSE) technology has been developed in application for combination the active layer with metal II layer. And this TSE technology has been applied in our Reduced-Mask process (five-mask) for cost reduction. The result shows that this amorphous-silicon thin-film transistor with four-photolithography process has great potential in mass production.

Citation Download Citation

Pi-Fu Chen, Jr-Hong Chen, Dou-I Chen, HsixgJu Sung, June-Wei Hwang, and I-Min Lu "Amorphous-silicon thin film transistor with two-step exposure process", Proc. SPIE 4079, Display Technologies III, (30 June 2000); https://doi.org/10.1117/12.389409

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