30 June 2000 Amorphous-silicon thin film transistor with two-step exposure process
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Abstract
The two-step-exposure (TSE) technology has been developed in application for combination the active layer with metal II layer. And this TSE technology has been applied in our Reduced-Mask process (five-mask) for cost reduction. The result shows that this amorphous-silicon thin-film transistor with four-photolithography process has great potential in mass production.
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Pi-Fu Chen, Pi-Fu Chen, Jr-Hong Chen, Jr-Hong Chen, Dou-I Chen, Dou-I Chen, HsixgJu Sung, HsixgJu Sung, June-Wei Hwang, June-Wei Hwang, I-Min Lu, I-Min Lu, } "Amorphous-silicon thin film transistor with two-step exposure process", Proc. SPIE 4079, Display Technologies III, (30 June 2000); doi: 10.1117/12.389409; https://doi.org/10.1117/12.389409
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