30 June 2000 Novel device structure for low-temperature polysilicon TFTs with controlled grain growth in channel regions
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Abstract
In this paper, we demonstrate a novel device structure of low-temperature polysilicon thin-film transistors (LTPS TFTs) for AMLCD applications with using excimer-laser crystallization (ELC). The device structure consists of a thin channel and a thick source/drain. This structure has its merit in the process of ELC and is capable of improving TFTs' electrical characteristics. During excimer laser irradiation, this kind of recessed structure is able to built up localized lateral thermal gradients in the regions near the steps and entice crystallization from the chiller thick source/drain regions toward the hotter thin channels. Because of the development of crystallization process, the average field-effect mobility of the devices can be increased to about 350 cm2/V.s, and the on/off current ratios exceed eight orders. In addition to improvement of device performance, the process window of ELC is broadened with the recessed structure.
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LiJing Cheng, YinLung Lu, ChingWei Lin, TingKuo Chang, HuangChung Cheng, "Novel device structure for low-temperature polysilicon TFTs with controlled grain growth in channel regions", Proc. SPIE 4079, Display Technologies III, (30 June 2000); doi: 10.1117/12.389424; https://doi.org/10.1117/12.389424
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