Q-Switched Semiconductor Diode Lasers With Integrated Modulators

D. Z. Tsang; J. N. Walpole

doi:10.1117/12.935716

30 November 1983 Q-Switched Semiconductor Diode Lasers With Integrated Modulators

D. Z. Tsang, J. N. Walpole

Proceedings Volume 0408, Integrated Optics III; (1983) https://doi.org/10.1117/12.935716
Event: 1983 Technical Symposium East, 1983, Arlington, United States

Abstract

Q-switched semiconductor diode lasers with an integrated modulator have been operated with full on/off modulation at rates of 3 GHz. In addition, modulation of the lasers has been shown up to a detector-limited frequency of 6 GHz. A new model of these devices, which includes amplified spontaneous emission and high gain, predicts the possibility of a new mode of Q-switched operation with the capacity for repetition rates of tens of gigahertz and binary pulse position modulation at rates of the order of 10 Gbit/sec.

Citation Download Citation

D. Z. Tsang and J. N. Walpole "Q-Switched Semiconductor Diode Lasers With Integrated Modulators", Proc. SPIE 0408, Integrated Optics III, (30 November 1983); https://doi.org/10.1117/12.935716

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