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4 July 2000 Novel CMOS photosensor with a gate-body tied NMOSFET structure
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Abstract
A novel CMOS photosensor with a gate-body tied NMOSFET structure realized in the triple is well presented. The photocurrent is amplified by the lateral and vertical BJT action, which results in two different output photocurrents, which can be used for different applications within a pixel. The lateral action results in the drain current with a higher sensitivity at low light intensity. And the vertical action results in the collector current with uniform responsivity over wider range of the light intensity. The proposed photosensor in compatible with CMOS circuits.
© (2000) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Youn-Jae Kook, Jae-Hun Jeong, Young-June Park, and Hong-Shick Min "Novel CMOS photosensor with a gate-body tied NMOSFET structure", Proc. SPIE 4082, Optical Sensing, Imaging, and Manipulation for Biological and Biomedical Applications, (4 July 2000); https://doi.org/10.1117/12.390543
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