4 July 2000 Two-photon optical-beam-induced current microscopy of indium gallium nitride light-emitting diodes
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Abstract
In this study, epilayers of packaged indium gallium nitride light emitting diodes (LED's) are characterized by optical beam induced current (OBIC) and photoluminescence laser scanning microscopy through two-photon excitation. OBIC reveals spatial and electrical characteristics of LED's which can not be distinguished by photoluminescence. When compared with single- photon OBIC, two-photon OBIC imaging not only exhibits superior image quality but also reveals more clearly the characteristics of the epilayers that are being focused on. The uniformity of these LED's OBIC images can also be related to their light emitting efficiency.
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Fu-Jen Kao, Fu-Jen Kao, Mao-Kuo Huang, Mao-Kuo Huang, Yung-Shun Wang, Yung-Shun Wang, Sheng-Lung Huang, Sheng-Lung Huang, Ming Kwei Lee, Ming Kwei Lee, Chi-Kuang Sun, Chi-Kuang Sun, Ping Chin Cheng, Ping Chin Cheng, } "Two-photon optical-beam-induced current microscopy of indium gallium nitride light-emitting diodes", Proc. SPIE 4082, Optical Sensing, Imaging, and Manipulation for Biological and Biomedical Applications, (4 July 2000); doi: 10.1117/12.390528; https://doi.org/10.1117/12.390528
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