Effects of preparation parameters on the optical constants of Ge2Sb2Te5 thin films

Quan Xie; Lisong Hou; Hao Ruan; Jinyan Li; Jing Li; Fuxi Gan

doi:10.1117/12.416821

7 February 2001 Effects of preparation parameters on the optical constants of Ge2Sb2Te5 thin films

Quan Xie, Lisong Hou, Hao Ruan, Jinyan Li, Jing Li, Fuxi Gan

Proceedings Volume 4085, Fifth International Symposium on Optical Storage (ISOS 2000); (2001) https://doi.org/10.1117/12.416821
Event: Fifth International Symposium on Optical Storage (IS0S 2000), 2000, Shanghai, China

Abstract

Effects of preparation parameters on the optical constants (n,k) of Ge₂Sb₂Te₅ thin films in the wavelength range of 300 - 830 nm were studied. The results show: (1) When the sputtering power is constant, the refractive index (n) first increases and then decreases with increasing Ar gas pressure, whereas the extinction coefficient (k) changes with Ar gas pressure in a contrary way to that of n. (2) When the Ar gas pressure is constant, for the amorphous thin films in the wavelength range of 300 nm - 500 nm, the refractive index (n) first increases and then decreases with increasing power, whereas the extinction coefficient (k) decreases monotonically. In the wavelength range of 500 nm - 830 nm, the refractive index (n) decreases with sputtering power, while the extinction coefficient (k) first decreases and then increases. For the crystalline thin films, in the wavelength range of 300 nm - 830 nm the refractive index (n) first decreases and then increases, whereas the extinction coefficient (k) decreases. (3) The extent of the influence of preparation parameters on n and k also changes with wavelength, it is greater in the long wavelength region than in the short wavelength region. The mechanism by which the optical constants of the Ge₂Sb₂Te₅ thin films are affected by the preparation parameters is analyzed.

Citation Download Citation

Quan Xie, Lisong Hou, Hao Ruan, Jinyan Li, Jing Li, and Fuxi Gan "Effects of preparation parameters on the optical constants of Ge2Sb2Te5 thin films", Proc. SPIE 4085, Fifth International Symposium on Optical Storage (ISOS 2000), (7 February 2001); https://doi.org/10.1117/12.416821

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