7 February 2001 Influence of AIN coverlayers prepared by reactive sputtering on DyFeCo magneto-optical media
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Proceedings Volume 4085, Fifth International Symposium on Optical Storage (ISOS 2000); (2001) https://doi.org/10.1117/12.416814
Event: Fifth International Symposium on Optical Storage (IS0S 2000), 2000, Shanghai, China
Abstract
AlNx/DyFeCo films were deposited on glass substrates by magnetron sputtering and reactive rf magnetron sputtering. The influence of AlNx coverlayers on DyFeCo magneto-optical media was studied. The results show that nitrogen surplus in AlNx leads to changes in the MO behavior of DyFeCo films due to the reaction of Dy with nitrogen. Furthermore, the influence of thickness of AlN films on the coercivity, anisotropy and eigenvalue of Kerr rotation angle of RE-TM films was investigated. The results can be explained based on the internal stress, impurities and the pinning of defects induced by 'peening effects' of high-speed atoms.
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Rui Xiong, Rui Xiong, Zuoyi Li, Zuoyi Li, Xiaofei Yang, Xiaofei Yang, Deichen Tian, Deichen Tian, Jing Shi, Jing Shi, Wufeng Tang, Wufeng Tang, } "Influence of AIN coverlayers prepared by reactive sputtering on DyFeCo magneto-optical media", Proc. SPIE 4085, Fifth International Symposium on Optical Storage (ISOS 2000), (7 February 2001); doi: 10.1117/12.416814; https://doi.org/10.1117/12.416814
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