7 February 2001 Optical properties and static recording performances of Ag-In-Te-Sb-O films using short-wavelength laser
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Proceedings Volume 4085, Fifth International Symposium on Optical Storage (ISOS 2000); (2001) https://doi.org/10.1117/12.416826
Event: Fifth International Symposium on Optical Storage (IS0S 2000), 2000, Shanghai, China
Abstract
Monolayer Ag-In-Te-Sb-O thin films were deposited by reactive RF-sputtering using Ag8In14Te55Sb23 alloy target in a mixed argon-oxygen plasma at different partial pressure ratio of oxygen to argon (P02/PAr). The optical properties of these films were studied. It was found that films deposited at P02/PAr of 2 to approximately 4% had comparatively large absorption in the wavelength range of 400 - 650 nm. After annealing at 300 degrees Celsius for 30 minutes under protection of argon, the reflectivity in the wavelength range of 500 - 700 nm could rise by about 18 - 25%. The optical constants (n,k) also changed much after heat treatment. XRD analyses indicated that the changes were attributed to the crystallization of Sb. The reflectivity contrast can be as high as 20% after being recorded using short-wavelength laser beam (514.4 nm) with low writing power (10 mW) and short pulse width (100 ns). The film also exhibits certain erasability. This kind of films possess the potentially for use in high density optical storage.
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Qinghui Li, Qinghui Li, Lisong Hou, Lisong Hou, Jinyan Li, Jinyan Li, Quan Xie, Quan Xie, Fuxi Gan, Fuxi Gan, Ning Liu, Ning Liu, } "Optical properties and static recording performances of Ag-In-Te-Sb-O films using short-wavelength laser", Proc. SPIE 4085, Fifth International Symposium on Optical Storage (ISOS 2000), (7 February 2001); doi: 10.1117/12.416826; https://doi.org/10.1117/12.416826
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