29 November 2000 Capture barrier of Sn-related DX centers in AlGaAs epilayers
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Proceedings Volume 4086, Fourth International Conference on Thin Film Physics and Applications; (2000) https://doi.org/10.1117/12.408452
Event: 4th International Conference on Thin Film Physics and Applications, 2000, Shanghai, China
Abstract
Thermal capture and emission processes of Sn-related DX centers in AlxGa1-xAs (x equals 0.26) were measured by a constant capacitance voltage transient in various temperatures. By employing a Laplace defect spectroscopic method, the non-exponential transients were decomposed into several discrete exponential components. The results shown that more exponential components appeared int he small emission rate region as capture period increased. This indicates that electrons preferentially fill shallow energy levels due to their lower capture barriers. Discrete exponential components of the capture process were identified and four of their barriers were preliminarily measured to be about 0.14, 0.15, 0.16, and 0.17 eV, respectively.
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Xifeng Xiao, Junyong Kang, Huahan Zhan, Qisheng Huang, Zhanguo Wang, "Capture barrier of Sn-related DX centers in AlGaAs epilayers", Proc. SPIE 4086, Fourth International Conference on Thin Film Physics and Applications, (29 November 2000); doi: 10.1117/12.408452; https://doi.org/10.1117/12.408452
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