29 November 2000 Characterization of PZT thick films derived from sol-gel techniques
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Proceedings Volume 4086, Fourth International Conference on Thin Film Physics and Applications; (2000) https://doi.org/10.1117/12.408336
Event: 4th International Conference on Thin Film Physics and Applications, 2000, Shanghai, China
Abstract
Crack free and preferred orientation Pb(ZrxTi1-x)O3 (x equals 0.45) thick films were prepared onto Pt(111)/Ti/TiO2/Si substrates by sol-gel and RTA techniques. Dielectric constants of PZT films increase with increasing the thickness. The as-prepared PZT films exhibited self-poling phenomenon and intrinsic piezoelectric responses. The PZT thick and thin films have different self- poling and poling effects. The internal bias field contributed to the intrinsic piezoelectric responses.
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Jinrong Cheng, Laiqing Luo, Zhongyan Meng, "Characterization of PZT thick films derived from sol-gel techniques", Proc. SPIE 4086, Fourth International Conference on Thin Film Physics and Applications, (29 November 2000); doi: 10.1117/12.408336; https://doi.org/10.1117/12.408336
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