29 November 2000 Characterization of surface oxidation on rare-earth Er film x-ray laser target
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Proceedings Volume 4086, Fourth International Conference on Thin Film Physics and Applications; (2000) https://doi.org/10.1117/12.408474
Event: 4th International Conference on Thin Film Physics and Applications, 2000, Shanghai, China
Abstract
Oxide growth on rare-earth erbium film at room temperature was quantitatively followed by means of quartz oscillation technique. Structure and chemistry of the oxide layer were characterized by x-ray diffraction and x-ray photoelectron spectroscopy. The humidity in oxidizing environment is found to be the key factor leading to the increase of oxidation rate of the erbium film. The oxide layer is composed of crystallites of erbium and erbium oxide. The O 1s photoelectron spectra are characterized by two components that are assigned to oxide and hydroxide species respectively. The oxide layer shows a layered structure with an oxide layer covered by a hydroxide overlayer.
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Yonggang Wu, Lingyan Chen, Zhe Zhang, Junming Wei, Shuji Qin, Weixing Tang, "Characterization of surface oxidation on rare-earth Er film x-ray laser target", Proc. SPIE 4086, Fourth International Conference on Thin Film Physics and Applications, (29 November 2000); doi: 10.1117/12.408474; https://doi.org/10.1117/12.408474
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