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29 November 2000 Comparison of PbTiO3 and BaTiO3 buffer layers for sol-gel-derived PZT thin films
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Proceedings Volume 4086, Fourth International Conference on Thin Film Physics and Applications; (2000) https://doi.org/10.1117/12.408353
Event: 4th International Conference on Thin Film Physics and Applications, 2000, Shanghai, China
Abstract
Pb(Zr,Ti)O3 (PZT) thin films with different thickness of PbTiO3 (PT) and BaTiO3 (BT) buffer layers were prepared by using a sol-gel spin-coating process respectively, followed by rapid thermal annealing. The experimental results indicated that both PT and BT could offer nucleation sites to lower the activation energy for the crystallization of PZT thin films, leading to a low annealing temperature and that PZT thin films with PT buffer layer annealed at 600 degree(s)C for 30 min are highly oriented. The ferroelectric properties of the films are strongly affected by the buffer layer. The different microstructures and dielectric properties of PZT films with PT and BT buffer layers are discussed.
© (2000) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Laiqing Luo, Jinrong Cheng, and Zhongyan Meng "Comparison of PbTiO3 and BaTiO3 buffer layers for sol-gel-derived PZT thin films", Proc. SPIE 4086, Fourth International Conference on Thin Film Physics and Applications, (29 November 2000); https://doi.org/10.1117/12.408353
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