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29 November 2000 D-A emission in photoluminescence spectrum of GaN grown by rf plasma-assisted MBE
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Proceedings Volume 4086, Fourth International Conference on Thin Film Physics and Applications; (2000) https://doi.org/10.1117/12.408454
Event: 4th International Conference on Thin Film Physics and Applications, 2000, Shanghai, China
Abstract
Donor-acceptor pair (DAP) in wurtzite GaN films grown by radio frequency plasma assisted molecule beam epitaxy on sapphire substrates using low temperature GaN buffer layers have been studied using photoluminescence. The energy levels of N vacancy, as donors, were calculated using an approximate formula, and good agreement with DA emission results. Native defects related to DAP and their formation energies were discussed.
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Zhibiao Zhao, Wei Li, Ming Qi, and Aizhen Li "D-A emission in photoluminescence spectrum of GaN grown by rf plasma-assisted MBE", Proc. SPIE 4086, Fourth International Conference on Thin Film Physics and Applications, (29 November 2000); https://doi.org/10.1117/12.408454
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