29 November 2000 Defects eliminated by hydrogen and boron ion bombardment in polycrystalline diamond films
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Proceedings Volume 4086, Fourth International Conference on Thin Film Physics and Applications; (2000) https://doi.org/10.1117/12.408322
Event: 4th International Conference on Thin Film Physics and Applications, 2000, Shanghai, China
Abstract
Bombardments of hydrogen and boron ions are performed by applying a negative bias voltage to the substrate during microwave plasma chemical vapor deposition process. The size of (001) faces increases after hydrogen ion etching, while other grains are etched off. The surfaces of [001]- oriented films after boron dying are investigated by scanning electron microscope and cathodoluminescent (CL) spectra. The absence of the band-A emission in the CL spectra means a low density of dislocations in the films. It is the first time to indicate that the peak at 741.5 nm and the broad peak at around 575 and 625 nm in the CL spectra are reduced efficiently after boron doping in (001) polycrystalline diamond films. We propose that these phenomena could be explained in simple terms by a penetration or adsorption model through the lattice nets of the [001]-oriented surfaces.
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Yiben Xia, Yiben Xia, Takashi Sekiguchi, Takashi Sekiguchi, Weimin Shi, Weimin Shi, Linjun Wang, Linjun Wang, Jianhua Ju, Jianhua Ju, Takafumi Yao, Takafumi Yao, } "Defects eliminated by hydrogen and boron ion bombardment in polycrystalline diamond films", Proc. SPIE 4086, Fourth International Conference on Thin Film Physics and Applications, (29 November 2000); doi: 10.1117/12.408322; https://doi.org/10.1117/12.408322
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