29 November 2000 Deposition of TiO2 thin films by plasma-enhanced chemical vapor deposition
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Proceedings Volume 4086, Fourth International Conference on Thin Film Physics and Applications; (2000) https://doi.org/10.1117/12.408482
Event: 4th International Conference on Thin Film Physics and Applications, 2000, Shanghai, China
Abstract
Titanium dioxide films were deposited onto Si(100) substrate by plasma enhanced chemical vapor deposition. Titanium isopropoxide (Ti(OC3H7)4 was used as precursor. Argon was used as a carrier gas for the precursor and the reactant for the plasma process. The deposition rate was studied as functions of deposition parameters such as r.f. power, substrate temperature, carrier gas flow rate. The structures of the films were characterized by x-ray diffraction and by Raman scattering. The thickness and refractive index of the films were characterized by ellipsometry. It was found that the refractive index of the films increased from 1.8 to 2.5 with substrate temperature range from 150 degree(s)C to 700 degree(s)C. And it increased monotonically with annealing temperature range from 400 degree(s)C to 900 degree(s)C. Films deposited onto Si(100) substrates were amorphous at substrate temperatures between 80 degree(s)C and 200 degree(s)C, a mixture of anatase and amorphous at 230 degree(s)C - 450 degree(s)C, anatase between 500 degree(s)C and 600 degree(s)C, and only rutile above 650 degree(s)C.
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Wenjun Li, Junfu Zhao, Xiaolin Zhao, Bingchu Cai, "Deposition of TiO2 thin films by plasma-enhanced chemical vapor deposition", Proc. SPIE 4086, Fourth International Conference on Thin Film Physics and Applications, (29 November 2000); doi: 10.1117/12.408482; https://doi.org/10.1117/12.408482
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