29 November 2000 Diamond film: a promising passivation film of porous silicon
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Proceedings Volume 4086, Fourth International Conference on Thin Film Physics and Applications; (2000) https://doi.org/10.1117/12.408320
Event: 4th International Conference on Thin Film Physics and Applications, 2000, Shanghai, China
Abstract
In this paper homogeneous and dense diamond films with good crystalline quality are successfully deposited on porous silicon surfaces by the microwave plasma assisted chemical vapor deposition method. Photoluminescence measurements show that the CVD diamond film-coated porous silicon has a weak shift of emission wavelength as compared with the stored porous silicon without a diamond film, and its PL intensity almost doesn't change with time. It means the diamond film can efficiently stabilize the PL wavelength and intensity of porous silicon and provide a better passivation effect. In addition, due to its well-known high hardness, the CVD diamond film can improve the mechanical strength of PS surface, and is therefore a promising candidate for passivation of porous silicon in the future.
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Weimin Shi, Linjun Wang, Yiben Xia, Jianhua Ju, Zhijun Fang, Yaowu Mo, "Diamond film: a promising passivation film of porous silicon", Proc. SPIE 4086, Fourth International Conference on Thin Film Physics and Applications, (29 November 2000); doi: 10.1117/12.408320; https://doi.org/10.1117/12.408320
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