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29 November 2000 Electronic and structural properties of InN thin films grown by MOMBE on sapphire substrates
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Proceedings Volume 4086, Fourth International Conference on Thin Film Physics and Applications; (2000) https://doi.org/10.1117/12.408343
Event: 4th International Conference on Thin Film Physics and Applications, 2000, Shanghai, China
Abstract
The development of high quality semiconductor thin films for different applications is a demanding problem in material science. InN has not been an intensively studied as AlN and GaN. There is relatively little information on the fundamental optical properties, charge carrier transport, and the properties and behavior of electrically active defects in the material. The absence of good-quality material lead even to conflicting data reported in the literature concerning the optical gap and band structure. In this publication it will be shown that InN thin films can be successfully grown using the MO MBE method. For the first time the proper choice of growth conditions allows to obtain good quality InN thin films with a charge carrier concentration as low as 8.8 X 1018 cm-3.
© (2000) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Jochen Aderhold, V. Yu. Davydov, F. Fedler, Harald Klausing, David Mistele, T. Rotter, O. Semchinova, Jens Stemmer, and Jurgen Graul "Electronic and structural properties of InN thin films grown by MOMBE on sapphire substrates", Proc. SPIE 4086, Fourth International Conference on Thin Film Physics and Applications, (29 November 2000); https://doi.org/10.1117/12.408343
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