29 November 2000 Electronic transport in amorphous 2,4,7-trinitro-9-fluorenone thin films
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Proceedings Volume 4086, Fourth International Conference on Thin Film Physics and Applications; (2000) https://doi.org/10.1117/12.408366
Event: 4th International Conference on Thin Film Physics and Applications, 2000, Shanghai, China
Abstract
The effect of trapping centers on the conductivity of amorphous 2,4,7-Trinitro-Nine-Fluorenone (a-TNF) is investigated by Space Charge Limited Current, Thermally Stimulated Current and Transient photoconductivity methods. It is found that electron traps in a-TNF have a smoothly varying distribution centered at about Et equals 0.29 +/- 0.04 eV with a dispersion parameter (sigma) equals 0.11 +/- 0.02 eV. The true activation energy at room temperature is Ea equals 0.45 +/- 0.03 eV. The zero-field extrapolated activation energy is Eao equals 0.65 +/- 0.02 eV. It was suggested that the transport of charge carriers in a-TNF is controlled by traps. Concentration of traps and drift mobility of electrons were evaluated.
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Ilia M. Kachirski, Ilia M. Kachirski, } "Electronic transport in amorphous 2,4,7-trinitro-9-fluorenone thin films", Proc. SPIE 4086, Fourth International Conference on Thin Film Physics and Applications, (29 November 2000); doi: 10.1117/12.408366; https://doi.org/10.1117/12.408366
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