29 November 2000 Enhance action by introducing cesium on surface inversion layer of P-silicon
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Proceedings Volume 4086, Fourth International Conference on Thin Film Physics and Applications; (2000) https://doi.org/10.1117/12.408427
Event: 4th International Conference on Thin Film Physics and Applications, 2000, Shanghai, China
Abstract
This paper presents the carrier distribution of MIS/IL solar cell in the strong inversion condition. The variation of the surface potential Vs with the fixed positive charge density Qs/q, energy structure and the sheet resistance have been calculated using Fermi statistics distribution. Based that, the MIS/IL solar cells are fabricated with the solar grade silicon material. Consequently, the difference of the solar cell performance before and after doping cesium is compared.
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Tietun Sun, Tietun Sun, Fanying Meng, Fanying Meng, Pingfang Cheng, Pingfang Cheng, } "Enhance action by introducing cesium on surface inversion layer of P-silicon", Proc. SPIE 4086, Fourth International Conference on Thin Film Physics and Applications, (29 November 2000); doi: 10.1117/12.408427; https://doi.org/10.1117/12.408427
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