29 November 2000 Heteroepitaxial film of silicon carbide grown on sapphire with a nitride buffer layer
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Proceedings Volume 4086, Fourth International Conference on Thin Film Physics and Applications; (2000); doi: 10.1117/12.408327
Event: 4th International Conference on Thin Film Physics and Applications, 2000, Shanghai, China
Abstract
Heteroepitaxial growth of single crystal Silicon Carbide (SiC) films on a novel compound substrate is discussed. Sapphire has successfully been used as substrate material for SOS structure. It shows good isolating properties. Comparing with silicon, its higher melt temperature makes this heteroepitaxial structure more sustainable for later high temperature device fabricate process. GaN and AlN are both wide band semiconductor, they are deposited on sapphire as buffer layer by the means of metal organic chemical vapor deposition to decrease the lattice mismatch between the substrate and the epitaxial layer, and SiC films was grown on buffer layer using APCVD. X-ray diffraction and scanning electron microscope are used to study the polytypes and morphology of the film. Some hexangular etching pits with size of 1 - 5 micrometers are found on the films.
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Jianping Wang, Yue Hao, Jun Peng, "Heteroepitaxial film of silicon carbide grown on sapphire with a nitride buffer layer", Proc. SPIE 4086, Fourth International Conference on Thin Film Physics and Applications, (29 November 2000); doi: 10.1117/12.408327; https://doi.org/10.1117/12.408327
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KEYWORDS
Silicon carbide

Sapphire

Crystals

Etching

Silicon films

Gallium nitride

Silicon

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