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29 November 2000 High-power InGaAsP/GaAs SCH SQW lasers
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Proceedings Volume 4086, Fourth International Conference on Thin Film Physics and Applications; (2000) https://doi.org/10.1117/12.408440
Event: 4th International Conference on Thin Film Physics and Applications, 2000, Shanghai, China
Abstract
InGaAsP/GaAs SCH SQW lasers have been prepared by LP-MOCVD. The dependence of threshold current density (Jth) on cavity length (L) was explained by threshold current condition and gain characteristics diodes samples with output power of 1 to 2 W, threshold current density (Jth) of 330 to 450 A/cm2 and external differential quantum efficiency ((eta) d) 35% to 75%, are in good agreement with the designed requirement.
© (2000) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Zhonghui Li, Jinhua Yang, Genzhu Wu, and Xingde Zhang "High-power InGaAsP/GaAs SCH SQW lasers", Proc. SPIE 4086, Fourth International Conference on Thin Film Physics and Applications, (29 November 2000); https://doi.org/10.1117/12.408440
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