In-situ photomodulated reflectance study on GaAs/AlxGa1-xAs single surface quantum well

Z.L. Miao; P. P. Chen; Wei Lu; W. L. Xu; Z.F. Li; W. Y. Cai; Xianzhang Yuan; Pulin Liu; Guo Liang Shi; Shuechu Shen

doi:10.1117/12.408450

29 November 2000 In-situ photomodulated reflectance study on GaAs/AlxGa1-xAs single surface quantum well

Z.L. Miao, P. P. Chen, Wei Lu, W. L. Xu, Z.F. Li, W. Y. Cai, Xianzhang Yuan, Pulin Liu, Guo Liang Shi, Shuechu Shen

Proceedings Volume 4086, Fourth International Conference on Thin Film Physics and Applications; (2000) https://doi.org/10.1117/12.408450
Event: 4th International Conference on Thin Film Physics and Applications, 2000, Shanghai, China

Abstract

We have studied the energy band transitions between confined sub-bands in 10 nm surface quantum well based on in-situ Photo-modulated Reflectance (PR) Spectrum in Molecular Beam Epitaxy system. The single surface quantum well (SQW) is confined by the vacuum on one side and by Al_xGa_1-xAs barrier on the other side. The structure parameters of the SQW are monitored by the Reflective High- Energy Electron Diffraction (RHEED) during growing procedure. In PR spectrum, we have observed clearly the transitions from the hole sub-bands to the electronic sub- bands. The transition of excitation states is first observed in single surface quantum well. The results are well explained by the effective mass approximation with parameters provided by RHEED.

Citation Download Citation

Z.L. Miao, P. P. Chen, Wei Lu, W. L. Xu, Z.F. Li, W. Y. Cai, Xianzhang Yuan, Pulin Liu, Guo Liang Shi, and Shuechu Shen "In-situ photomodulated reflectance study on GaAs/AlxGa1-xAs single surface quantum well", Proc. SPIE 4086, Fourth International Conference on Thin Film Physics and Applications, (29 November 2000); https://doi.org/10.1117/12.408450

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