29 November 2000 Influence of Cd diffusion on the structure and photoluminescence of CdSe/ZnSe multiple quantum wells
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Proceedings Volume 4086, Fourth International Conference on Thin Film Physics and Applications; (2000) https://doi.org/10.1117/12.408424
Event: 4th International Conference on Thin Film Physics and Applications, 2000, Shanghai, China
Abstract
In this paper, we have fabricated a 20 period CdSe/ZnSe MQW's on (001) orientated GaAs grown by metalorganic chemical vapor deposition under se-rich condition at the growth temperature of 500 degree(s)C. CdSe/ZnSe MQW's structure was characterized by means of x-ray diffraction and Raman scattering. These experimental results indicated the formation of new Cd1-xZnxSe layers and the existence of Cd and Zn vacancies in CdSe/ZnSe MQW's. The photoluminescence spectra of CdSe/ZnSe MQW's at low temperature was composed of a very strong and narrow band A at 2.4 eV and a weak and broadened band B at 2 eV. In order to understand the influence of Cd diffusion on the structure and photoluminescence (PL) of CdSe/ZnSe multiple quantum wells (MQW's), a new model of Cd diffusion in CdSe/ZnSe MQW's was given. Based on the simulation of Cd diffusion in CdSe/ZnSe MQW's and the calculation of the envelop-function approximation, the origin of PL of CdSe/ZnSe MQW's was discussed.
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Yuxue Liu, De Zen Shen, Yichun Liu, Jiying Zhang, Xianggui Kong, Xiwu Fan, "Influence of Cd diffusion on the structure and photoluminescence of CdSe/ZnSe multiple quantum wells", Proc. SPIE 4086, Fourth International Conference on Thin Film Physics and Applications, (29 November 2000); doi: 10.1117/12.408424; https://doi.org/10.1117/12.408424
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