29 November 2000 Influence of hydrogen plasma processing on gas-sensitive tin dioxied thin film properties
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Proceedings Volume 4086, Fourth International Conference on Thin Film Physics and Applications; (2000) https://doi.org/10.1117/12.408464
Event: 4th International Conference on Thin Film Physics and Applications, 2000, Shanghai, China
Abstract
The influence of glow discharge hydrogen plasma processing on undoped tin dioxide (SnO2) thin film structure and properties have been investigated. The films of 150 - 200 nm thickness were deposited by a method of magnetron sputtering on Al2O3 substrate at the temperature of this one 250 degree(s)C with a rate of 1.5 - 2.0 nm/min in argon-oxygen mixture atmosphere. It was shown these films are amorphous just after fabrication, theirs polycrystalline structure appears after annealing and disappears after processing in the hydrogen plasma. Such a processing expands a temperature range of film sensitivity to ethanol and heptane vapors, increases the sensitivity to low concentration of those.
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Igor A. Karapatnitski, Igor A. Karapatnitski, Konstantin A. Mit', Konstantin A. Mit', Daniya M. Mukhamedshina, Daniya M. Mukhamedshina, Grigory G. Baikov, Grigory G. Baikov, "Influence of hydrogen plasma processing on gas-sensitive tin dioxied thin film properties", Proc. SPIE 4086, Fourth International Conference on Thin Film Physics and Applications, (29 November 2000); doi: 10.1117/12.408464; https://doi.org/10.1117/12.408464
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