Influence of magnetron sputtering CoZrNb stochiometric relation in deposition film

Jiliang Zhang; Sanming Xiang; Chunsheng Yang

doi:10.1117/12.408303

29 November 2000 Influence of magnetron sputtering CoZrNb stochiometric relation in deposition film

Jiliang Zhang, Sanming Xiang, Chunsheng Yang

Proceedings Volume 4086, Fourth International Conference on Thin Film Physics and Applications; (2000) https://doi.org/10.1117/12.408303
Event: 4th International Conference on Thin Film Physics and Applications, 2000, Shanghai, China

Abstract

The experiments of Co₈₉Zr₄Nb₆₇ magnetron sputtering showed that the stoichiometric relation in deposited film is obviously different from that in target. The fact that Zr and Nb contents, which have larger atomic mass, in deposited film were more than that in target showed there were different virtual sources of Co, Zr and Nb between target and substrate.

Citation Download Citation

Jiliang Zhang, Sanming Xiang, and Chunsheng Yang "Influence of magnetron sputtering CoZrNb stochiometric relation in deposition film", Proc. SPIE 4086, Fourth International Conference on Thin Film Physics and Applications, (29 November 2000); https://doi.org/10.1117/12.408303

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