29 November 2000 Influence of magnetron sputtering CoZrNb stochiometric relation in deposition film
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Proceedings Volume 4086, Fourth International Conference on Thin Film Physics and Applications; (2000) https://doi.org/10.1117/12.408303
Event: 4th International Conference on Thin Film Physics and Applications, 2000, Shanghai, China
Abstract
The experiments of Co89Zr4Nb67 magnetron sputtering showed that the stoichiometric relation in deposited film is obviously different from that in target. The fact that Zr and Nb contents, which have larger atomic mass, in deposited film were more than that in target showed there were different virtual sources of Co, Zr and Nb between target and substrate.
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Jiliang Zhang, Jiliang Zhang, Sanming Xiang, Sanming Xiang, Chunsheng Yang, Chunsheng Yang, } "Influence of magnetron sputtering CoZrNb stochiometric relation in deposition film", Proc. SPIE 4086, Fourth International Conference on Thin Film Physics and Applications, (29 November 2000); doi: 10.1117/12.408303; https://doi.org/10.1117/12.408303
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