Laser-induced damage of 1064-nm ZnS/MgF2 narrow-band interference filter

Haiyang Hu; Zhengxiu Fan

doi:10.1117/12.408384

29 November 2000 Laser-induced damage of 1064-nm ZnS/MgF₂ narrow-band interference filter

Haiyang Hu, Zhengxiu Fan

Proceedings Volume 4086, Fourth International Conference on Thin Film Physics and Applications; (2000) https://doi.org/10.1117/12.408384
Event: 4th International Conference on Thin Film Physics and Applications, 2000, Shanghai, China

Abstract

The laser-induced damage thresholds, weak absorption and damage morphology of ZnS/MgF₂ interference filters, which were designed to pass radiation around a wavelength of 1064 nm, have been examined. The theory about the electric field and the temperature rise in the multilayer was presented to explain the phenomena, which were observed in the experiments.

Citation Download Citation

Haiyang Hu and Zhengxiu Fan "Laser-induced damage of 1064-nm ZnS/MgF₂ narrow-band interference filter", Proc. SPIE 4086, Fourth International Conference on Thin Film Physics and Applications, (29 November 2000); https://doi.org/10.1117/12.408384

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