29 November 2000 Low-temperature preparation of BaTiO3 thin film by MOD and hydrothermal treatment
Author Affiliations +
Proceedings Volume 4086, Fourth International Conference on Thin Film Physics and Applications; (2000) https://doi.org/10.1117/12.408342
Event: 4th International Conference on Thin Film Physics and Applications, 2000, Shanghai, China
Abstract
BaTiO3 (BTO) thin films with perovskite structure have been prepared on Ti/Pt/Ti/SiO2/Si substrate using a combined process of conventional MOD process and hydrothermal method. BTO thin films with polycrystalline structure are obtained on silicon at low processing temperatures lower than 200 degree(s)C. The film thickness ranged from 0.20 to 0.84 micrometers . The structural and ferroelectric properties were investigated as a function of film thickness by x-ray diffraction, scanning electron microscopy, Raman spectroscopy and ferroelectric test system. The film retains the tetragonal perovskite structure with the (100) preferred orientation perpendicular to the film surface independent of film thickness. With increasing of thickness, polarization and coercive field of BaTiO3 thin films increased and shown the same trends.
© (2000) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Zhiqiang Wei, Zhiqiang Wei, Huaping Xu, Huaping Xu, Kaoru Yamashita, Kaoru Yamashita, Masanori Okuyama, Masanori Okuyama, } "Low-temperature preparation of BaTiO3 thin film by MOD and hydrothermal treatment", Proc. SPIE 4086, Fourth International Conference on Thin Film Physics and Applications, (29 November 2000); doi: 10.1117/12.408342; https://doi.org/10.1117/12.408342
PROCEEDINGS
4 PAGES


SHARE
Back to Top