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29 November 2000 MBE growth and temperature-dependent PL of ZnSe:Cl epilayers
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Proceedings Volume 4086, Fourth International Conference on Thin Film Physics and Applications; (2000) https://doi.org/10.1117/12.408449
Event: 4th International Conference on Thin Film Physics and Applications, 2000, Shanghai, China
Abstract
Some newly obtained photoluminescence (PL) data from the ZnSe:Cl epilayers grown by molecular beam epitaxy are reported here. The PL spectrum at 10 K is dominated by a strong and narrow Cl0X peak at 2.797 eV with the FWHM of about 13 meV. The quenching tendency of Cl0X peak with the increasing temperature is clearly characterized by two temperature regimes, corresponding to two thermal activated nonradiative mechanisms with activation energies of about 16 meV and 90 meV respectively. The weak emission at 2.713 eV is thermally quenched by the presence of nonradiative center with the same activation energy of about 90 meV as the Cl0X. The similar quenching tendency of the 2.713 eV emission and the Cl0X peak implies that they are quenched by the same physical mechanisms.
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Shanzhong Wang, Shengwu Xie, Qianjun Pang, Rongbin Ji, Yanq Wu, and Li He "MBE growth and temperature-dependent PL of ZnSe:Cl epilayers", Proc. SPIE 4086, Fourth International Conference on Thin Film Physics and Applications, (29 November 2000); https://doi.org/10.1117/12.408449
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