29 November 2000 MBE growth of HgCdTe and device applications
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Proceedings Volume 4086, Fourth International Conference on Thin Film Physics and Applications; (2000) https://doi.org/10.1117/12.408462
Event: 4th International Conference on Thin Film Physics and Applications, 2000, Shanghai, China
Abstract
The recent progress in MBE growth of HgCdTe at the Research Center for Advanced Materials and Devices, and the National Laboratory for Infrared Physics is reported. It is found that the excellent compositional uniformity and reproducibility of HgCdTe can be archived by MBE technique. The results of surface morphology, dislocation density, electrical properties and focal plane array detectors are described in the paper.
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Li He, Yanq Wu, Shanli Wang, Meifang Yu, Lu Chen, Yimin Qiao, Jianrong Yang, Weizheng Fang, Yanjin Li, Qingyao Zhang, Rijun Ding, Junhao Chu, "MBE growth of HgCdTe and device applications", Proc. SPIE 4086, Fourth International Conference on Thin Film Physics and Applications, (29 November 2000); doi: 10.1117/12.408462; https://doi.org/10.1117/12.408462
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