29 November 2000 MBE growth of HgCdTe and device applications
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Proceedings Volume 4086, Fourth International Conference on Thin Film Physics and Applications; (2000) https://doi.org/10.1117/12.408462
Event: 4th International Conference on Thin Film Physics and Applications, 2000, Shanghai, China
Abstract
The recent progress in MBE growth of HgCdTe at the Research Center for Advanced Materials and Devices, and the National Laboratory for Infrared Physics is reported. It is found that the excellent compositional uniformity and reproducibility of HgCdTe can be archived by MBE technique. The results of surface morphology, dislocation density, electrical properties and focal plane array detectors are described in the paper.
© (2000) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Li He, Li He, Yanq Wu, Yanq Wu, Shanli Wang, Shanli Wang, Meifang Yu, Meifang Yu, Lu Chen, Lu Chen, Yimin Qiao, Yimin Qiao, Jianrong Yang, Jianrong Yang, Weizheng Fang, Weizheng Fang, Yanjin Li, Yanjin Li, Qingyao Zhang, Qingyao Zhang, Rijun Ding, Rijun Ding, Junhao Chu, Junhao Chu, } "MBE growth of HgCdTe and device applications", Proc. SPIE 4086, Fourth International Conference on Thin Film Physics and Applications, (29 November 2000); doi: 10.1117/12.408462; https://doi.org/10.1117/12.408462
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