Translator Disclaimer
29 November 2000 Mechanism of formation and photoluminescence of Si quantum dots embedded in amorphous SiO2 matrix
Author Affiliations +
Proceedings Volume 4086, Fourth International Conference on Thin Film Physics and Applications; (2000) https://doi.org/10.1117/12.408423
Event: 4th International Conference on Thin Film Physics and Applications, 2000, Shanghai, China
Abstract
Films of a-SiOx with different oxygen content were deposited by electron cyclotron resonance microwave plasma technique at room temperature, where the films were annealed in an Ar ambient for 30 minutes at temperatures range from 250 to 1050 degree(s)C. The system of nc-Si quantum dots dispersed in SiO2 matrix was obtained for the films annealed at 1050 degree(s)C. The structural change induced from annealing was characterized by infrared and Raman spectra, which was correlated with the identification of luminescence centers. A broad photoluminescence band centered at 750 and 770 nm is attributed to the quantum confinement effect of the Si clusters. Another PL band between 560 - 620 nm is attributed to the defects in the interfacial regions: self- trapped excitons.
© (2000) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Yu Liang, Yan Jia, Yichun Liu, Yuxue Liu, De Zen Shen, Yuling Sun, and Zhongmin Su "Mechanism of formation and photoluminescence of Si quantum dots embedded in amorphous SiO2 matrix", Proc. SPIE 4086, Fourth International Conference on Thin Film Physics and Applications, (29 November 2000); https://doi.org/10.1117/12.408423
PROCEEDINGS
4 PAGES


SHARE
Advertisement
Advertisement
Back to Top