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29 November 2000 Nitrogen-doped plasma-enhanced CVD amorphous carbon: processes and properties
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Proceedings Volume 4086, Fourth International Conference on Thin Film Physics and Applications; (2000) https://doi.org/10.1117/12.408318
Event: 4th International Conference on Thin Film Physics and Applications, 2000, Shanghai, China
Abstract
In this work we discuss thin film amorphous carbon which is deposited in a dual frequency plasma enhanced CVD system with a nitrogen-containing ambient. Unlike most carbon films deposited using PECVD, the films in this study were deposited on the grounded electrode and therefore subject to little energetic bombardment during growth. Methane was used as the carbon-containing precursor. We illustrate some potential applications for this type of film and discuss the effect of various process parameters on resulting film properties, such as optical constants, stoichiometry, and chemical bonding and structure.
© (2000) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Steven A. Voight, Steven M. Smith, Harland G. Tompkins, Andy Hooper, and A. Talin "Nitrogen-doped plasma-enhanced CVD amorphous carbon: processes and properties", Proc. SPIE 4086, Fourth International Conference on Thin Film Physics and Applications, (29 November 2000); https://doi.org/10.1117/12.408318
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