29 November 2000 Novel Si homojunction far-infrared detectors
Author Affiliations +
Proceedings Volume 4086, Fourth International Conference on Thin Film Physics and Applications; (2000) https://doi.org/10.1117/12.408411
Event: 4th International Conference on Thin Film Physics and Applications, 2000, Shanghai, China
Abstract
A novel concept to develop far-infrared (FIR) Si detectors is proposed based on homojunction internal photoemission. As the first approach, a 48 micrometers (lambda) c Si FIR detector is demonstrated on molecular beam epitaxy grown homojunction multilayers consisting of highly doped emitter layers and undoped intrinsic layers. The detector shows high responsivity over a wide wavelength range with a peak responsivity of 12.3 +/- 0.1 A/W at 27.5 micrometers and detectivity D* of 6.6 X 1010 cmHz1/2/W at 4.2 K. The (lambda) c and bias dependent quantum efficiency agree well with theory. Based on the experimental results and the model, Si FIR detectors (40 approximately 200 micrometers ) with high performance and tailorable (lambda) c can be realized using higher emitter layer doping concentrations.
© (2000) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
W. Z. Shen, W. Z. Shen, A. G. Unil Perera, A. G. Unil Perera, } "Novel Si homojunction far-infrared detectors", Proc. SPIE 4086, Fourth International Conference on Thin Film Physics and Applications, (29 November 2000); doi: 10.1117/12.408411; https://doi.org/10.1117/12.408411
PROCEEDINGS
4 PAGES


SHARE
RELATED CONTENT


Back to Top