29 November 2000 Numerical simulation of continuous Nd:YAG laser annealing of InP
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Proceedings Volume 4086, Fourth International Conference on Thin Film Physics and Applications; (2000); doi: 10.1117/12.408430
Event: 4th International Conference on Thin Film Physics and Applications, 2000, Shanghai, China
Abstract
The semiconductor solid phase epitaxial model of continuous laser-annealing is used to simulate the laser-annealing process of different doping concentration of InP at the continuous Nd:YAG laser. Specially, quasi-static model is used to simulate the radial heat dissipation from radiant region to radiationless region. At the same time, thermal conductivity and optical absorption coefficient varied with temperature is also considered. The method of hidden-form different is used in solving 1D, non-homogeneous, nonlinear partial differential equation of heat conduction. At the room temperature T0 equals 300 K and the power intensity of laser I0 equals 800 W/cm2, the result is that the temperature of surface reaches about 1290 K after 3.8 sec.
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Renwu Fu, Zhihua Cai, Chao Chen, Marija I. Markevich, A. M. Chaplanov, "Numerical simulation of continuous Nd:YAG laser annealing of InP", Proc. SPIE 4086, Fourth International Conference on Thin Film Physics and Applications, (29 November 2000); doi: 10.1117/12.408430; https://doi.org/10.1117/12.408430
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KEYWORDS
Absorption

Nd:YAG lasers

Semiconductors

Semiconductor lasers

Doping

Numerical simulations

Solids

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