29 November 2000 P-type polycrystalline Si films prepared by aluminum-induced crystallization
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Proceedings Volume 4086, Fourth International Conference on Thin Film Physics and Applications; (2000) https://doi.org/10.1117/12.408354
Event: 4th International Conference on Thin Film Physics and Applications, 2000, Shanghai, China
Abstract
p-type poly-Si thin films were prepared by aluminum induced crystallization (AlC) and doping of a-Si:H. The a-Si:H precursors were deposited by plasma enhanced chemical vapor deposition on glass substrates and then covered with thin Al layers of different thickness. The crystallization was performed by conventional thermal annealing. X-ray diffraction and secondary ion mass spectroscopy measurements were carried out to study the structure change and the Al profile in the annealed films. Resistivity, Hall mobility and carrier concentration were also measured. Results showed that poly-Si films could be obtained by annealing a-Si:H in contact with a thin Al layer at 450 - 550 degree(s)C for 5 - 60 minutes. The crystallized films are p-type and have low resistivity, high Hall mobility and carrier concentration of 0.06 (Omega) cm, 20 cm2/Vs and approximately 1018 cm-3, respectively, largely improved compared with the reported results.
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Zhenrui Yu, Yasuhiro Matsumoto, "P-type polycrystalline Si films prepared by aluminum-induced crystallization", Proc. SPIE 4086, Fourth International Conference on Thin Film Physics and Applications, (29 November 2000); doi: 10.1117/12.408354; https://doi.org/10.1117/12.408354
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