29 November 2000 Photoluminescence characterization in GaAs/AlGaAs quantum well infrared photodetectors
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Proceedings Volume 4086, Fourth International Conference on Thin Film Physics and Applications; (2000) https://doi.org/10.1117/12.408457
Event: 4th International Conference on Thin Film Physics and Applications, 2000, Shanghai, China
Abstract
Micro-photoluminescence ((mu) -PL) experiments have been carried out on the cleaved facet of quantum well infrared photodetector to extract multiple quantum well signal. Some structures and peak response wavelength have been estimated by a numerical calculation based on the square well model. Thus, a relationship between PL spectrum and parameters was built.
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W. Y. Cai, Z.F. Li, Na Li, Wei Lu, Junming Zhou, Q. Huang, "Photoluminescence characterization in GaAs/AlGaAs quantum well infrared photodetectors", Proc. SPIE 4086, Fourth International Conference on Thin Film Physics and Applications, (29 November 2000); doi: 10.1117/12.408457; https://doi.org/10.1117/12.408457
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