Photoluminescence characterization in GaAs/AlGaAs quantum well infrared photodetectors

W. Y. Cai; Z.F. Li; Na Li; Wei Lu; Junming Zhou; Q. Huang

doi:10.1117/12.408457

29 November 2000 Photoluminescence characterization in GaAs/AlGaAs quantum well infrared photodetectors

W. Y. Cai, Z.F. Li, Na Li, Wei Lu, Junming Zhou, Q. Huang

Proceedings Volume 4086, Fourth International Conference on Thin Film Physics and Applications; (2000) https://doi.org/10.1117/12.408457
Event: 4th International Conference on Thin Film Physics and Applications, 2000, Shanghai, China

Abstract

Micro-photoluminescence ((mu) -PL) experiments have been carried out on the cleaved facet of quantum well infrared photodetector to extract multiple quantum well signal. Some structures and peak response wavelength have been estimated by a numerical calculation based on the square well model. Thus, a relationship between PL spectrum and parameters was built.

Citation Download Citation

W. Y. Cai, Z.F. Li, Na Li, Wei Lu, Junming Zhou, and Q. Huang "Photoluminescence characterization in GaAs/AlGaAs quantum well infrared photodetectors", Proc. SPIE 4086, Fourth International Conference on Thin Film Physics and Applications, (29 November 2000); https://doi.org/10.1117/12.408457

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