Translator Disclaimer
29 November 2000 Photoluminescence properties of ultrathin CdSe layer depositions in ZnSe matrix
Author Affiliations +
Proceedings Volume 4086, Fourth International Conference on Thin Film Physics and Applications; (2000) https://doi.org/10.1117/12.408453
Event: 4th International Conference on Thin Film Physics and Applications, 2000, Shanghai, China
Abstract
The photoluminescence properties of ultrathin CdSe layer were reported in this paper. Several monolayers of CdSe well layer were deposited in ZnSe matrix by lower-pressure metalorganic chemical vapor deposition. Two peaks were observed in the ultrathin structure. It was considered that the high-energy peak came from the exciton combination in the ultrathin CdSe well layer and the low-energy peak might come from the interface or impurity. The decrease of growth periods could lead the peak value of exciton peak red shift and the full-width at half-maximum become narrow. This was codetermined by the effect of interdiffusion and interface roughness or well width fluctuation.
© (2000) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Yu Yang, De Zen Shen, Jiying Zhang, Xiaowei Zhao, Yuxue Liu, D. X. Zhao, and Xiwu Fan "Photoluminescence properties of ultrathin CdSe layer depositions in ZnSe matrix", Proc. SPIE 4086, Fourth International Conference on Thin Film Physics and Applications, (29 November 2000); https://doi.org/10.1117/12.408453
PROCEEDINGS
4 PAGES


SHARE
Advertisement
Advertisement
Back to Top