Photothermal ionization spectroscopy of Be acceptor in GaAs

Xianzhang Yuan; Wei Lu; Guo Liang Shi; Zhanghai Chen; Z.L. Miao; Shuechu Shen

doi:10.1117/12.408455

29 November 2000 Photothermal ionization spectroscopy of Be acceptor in GaAs

Xianzhang Yuan, Wei Lu, Guo Liang Shi, Zhanghai Chen, Z.L. Miao, Shuechu Shen

Proceedings Volume 4086, Fourth International Conference on Thin Film Physics and Applications; (2000) https://doi.org/10.1117/12.408455
Event: 4th International Conference on Thin Film Physics and Applications, 2000, Shanghai, China

Abstract

The photothermal ionization spectroscopy (PTIS) has been employed to study Be shallow acceptor states in GaAs grown by MBE. We have observed the G line, D line and C line transitions which are from the ground state 1s_3/2((Gamma) ₈⁺) of Be acceptor to the first three excited odd-parity states 2p_3/2(Gamma) ₈^-), 2p_5/2((Gamma) ₈^-) and 2p_5/2((Gamma) ₇^-), respectively. The transition from the ground state 1s_3/2((Gamma) ₈^-) to the excited state 2p_1/2((Gamma) ₆^-) is identified as well. According to the PTIS, we deduce the binding energy of Be ground state in GaAs is 28.6 mev.

Citation Download Citation

Xianzhang Yuan, Wei Lu, Guo Liang Shi, Zhanghai Chen, Z.L. Miao, and Shuechu Shen "Photothermal ionization spectroscopy of Be acceptor in GaAs", Proc. SPIE 4086, Fourth International Conference on Thin Film Physics and Applications, (29 November 2000); https://doi.org/10.1117/12.408455

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