29 November 2000 Planar photonic device using surface thin film stressors
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Proceedings Volume 4086, Fourth International Conference on Thin Film Physics and Applications; (2000) https://doi.org/10.1117/12.408417
Event: 4th International Conference on Thin Film Physics and Applications, 2000, Shanghai, China
Abstract
Employing photoelastic effect with thermally stable and controllable metal stressor stripes for low propagation loss (on the order of 1 dB/cm) optical waveguide has been achieved in both InP and GaAs based planar waveguides. The study of stressors is based on Ni and WNi stripes. Planar processes, involving both photoelastic WNi stressor and He- implantation, have been used in the fabrication of single- quantum-well photoelastic GaAs/AlGaAs lasers and of the InGaAsP/InP Franz-Keldysh effect electroabsorption waveguide modulators. Get high performance photoelastic semiconductor laser and electroabsorption modulator.
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W.-X. Chen, W.-X. Chen, Q. J. Xing, Q. J. Xing, L. S. Yu, L. S. Yu, Qizhi Z. Liu, Qizhi Z. Liu, Paul K. L. Yu, Paul K. L. Yu, S. S. Lau, S. S. Lau, } "Planar photonic device using surface thin film stressors", Proc. SPIE 4086, Fourth International Conference on Thin Film Physics and Applications, (29 November 2000); doi: 10.1117/12.408417; https://doi.org/10.1117/12.408417
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