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29 November 2000 Platinum silicide formation during pulsed laser annealing prepared by pulsed laser deposition
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Proceedings Volume 4086, Fourth International Conference on Thin Film Physics and Applications; (2000) https://doi.org/10.1117/12.408391
Event: 4th International Conference on Thin Film Physics and Applications, 2000, Shanghai, China
Abstract
The formation of PtSi ultra-thin film prepared by pulsed laser deposition during pulsed laser annealing has been studied. The growth sequence of the Pt2Si and the PtSi phases that evolved as the result of the diffusion reaction in the bilayers was monitored by X-ray photoelectron spectrum (XPS). The structure characteristics of PtSi thin films prepared by different preparing conditions were investigated by X-ray diffraction and XPS. Compared to conventional furnace anneal, we got superior uniformity, lower continuous film thickness of the resulting PtSi layers and smoother PtSi/Si interfaces.
© (2000) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Meicheng Li, Xuekang Chen, Jing Wang, Jianping Yang, Gan Wu, and Liancheng Zhao "Platinum silicide formation during pulsed laser annealing prepared by pulsed laser deposition", Proc. SPIE 4086, Fourth International Conference on Thin Film Physics and Applications, (29 November 2000); https://doi.org/10.1117/12.408391
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