29 November 2000 Preparation and characterization of silicon carbide thin films synthesized by rf reactive sputtering
Author Affiliations +
Proceedings Volume 4086, Fourth International Conference on Thin Film Physics and Applications; (2000) https://doi.org/10.1117/12.408436
Event: 4th International Conference on Thin Film Physics and Applications, 2000, Shanghai, China
Abstract
Carbon-rich SiC thin films were synthesized by rf-reactive sputtering at different anodic voltages, 1.2 kV, 1.6 kV and 2.0 kV respectively. XPS, FTIR, Raman spectra and Nano Indentor microhardness were used to characterize as- deposited thin films. The results showed that higher anodic voltage enabled to increase Si-C bond and sp3-bonded carbon atoms in the films. The sample grown at 2.0 kV exhibited Si/C ratio of nearly 1 from XPS results, a pronounced Si-C peak in the FTIR spectra, only a weak peak at 1420 cm-1 and no other graphite peak in the Raman spectra, the microhardness of 25.2 GPa.
© (2000) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Xiaofeng Peng, Xiaofeng Peng, Yuzhi Zhang, Yuzhi Zhang, Lixin Song, Lixin Song, Xingfang Hu, Xingfang Hu, "Preparation and characterization of silicon carbide thin films synthesized by rf reactive sputtering", Proc. SPIE 4086, Fourth International Conference on Thin Film Physics and Applications, (29 November 2000); doi: 10.1117/12.408436; https://doi.org/10.1117/12.408436
PROCEEDINGS
4 PAGES


SHARE
Back to Top