29 November 2000 Preparation and properties of IrO2 thin films grown by dc magnetron reactive sputtering method
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Proceedings Volume 4086, Fourth International Conference on Thin Film Physics and Applications; (2000) https://doi.org/10.1117/12.408293
Event: 4th International Conference on Thin Film Physics and Applications, 2000, Shanghai, China
Abstract
Iridium oxide (IrO2) thin films were successfully grown on SiO2/Si(100) substrate by DC magnetron reactive sputtering method with an Ir target (99.99% purity). The effects of sputtering parameters and annealing conditions on the crystalline nature and morphology of IrO2 thin films were discussed. High orientation at (110) or (200) of IrO2 thin films were occurred by annealed films. For fatigue properties, PZT thin films using an IrO2 electrode have largely improved than that using a Pt/Ti electrode.
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Shijun Wang, Shijun Wang, Aili Ding, Aili Ding, Pingsun Qiu, Pingsun Qiu, Xiyun He, Xiyun He, Weigen Luo, Weigen Luo, } "Preparation and properties of IrO2 thin films grown by dc magnetron reactive sputtering method", Proc. SPIE 4086, Fourth International Conference on Thin Film Physics and Applications, (29 November 2000); doi: 10.1117/12.408293; https://doi.org/10.1117/12.408293
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