Preparation of CuInSe2 film with electrodeposition

Wenyi Li; Jian Yu; Xuebin Yu; Qiulong Chen; Xun Cai

doi:10.1117/12.408435

29 November 2000 Preparation of CuInSe₂ film with electrodeposition

Wenyi Li, Jian Yu, Xuebin Yu, Qiulong Chen, Xun Cai

Proceedings Volume 4086, Fourth International Conference on Thin Film Physics and Applications; (2000) https://doi.org/10.1117/12.408435
Event: 4th International Conference on Thin Film Physics and Applications, 2000, Shanghai, China

Abstract

CuInSe₂(CIS) films directly electrodeposited on sputtered Mo-glass, sprayed SnO₂-glass substrates had been accomplished at room temperature in the potentiostatic mode from a bath containing CuCl, InCl₃(DOT)4H₂O and SeO₂. The acidity of bath was adjusted to 1PH. Energy dispersive spectrometry, atomic force microscopy (AFM), x- ray diffraction and hot-probe method was utilized to characterize the CIS films. The key factor for preparing single-phase CuInSe₂ is the proportion of CuCl, InCl₃(DOT)4H₂O and SeO₂. The CIS films are nearly stoichiometry of CuInSe₂ and polycrystalline on Mo- glass. The Cu excess films are p-type semiconductor, and the In excess films n-type. The deposition potential obviously affects the surface morphology of CIS films. AFM results had indicated that the CIS films on Mo-glass grow in layer and on SnO₂ glass in island.

Citation Download Citation

Wenyi Li, Jian Yu, Xuebin Yu, Qiulong Chen, and Xun Cai "Preparation of CuInSe₂ film with electrodeposition", Proc. SPIE 4086, Fourth International Conference on Thin Film Physics and Applications, (29 November 2000); https://doi.org/10.1117/12.408435

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