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29 November 2000 Preparation of CuInSe2 film with electrodeposition
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Proceedings Volume 4086, Fourth International Conference on Thin Film Physics and Applications; (2000) https://doi.org/10.1117/12.408435
Event: 4th International Conference on Thin Film Physics and Applications, 2000, Shanghai, China
Abstract
CuInSe2(CIS) films directly electrodeposited on sputtered Mo-glass, sprayed SnO2-glass substrates had been accomplished at room temperature in the potentiostatic mode from a bath containing CuCl, InCl3(DOT)4H2O and SeO2. The acidity of bath was adjusted to 1PH. Energy dispersive spectrometry, atomic force microscopy (AFM), x- ray diffraction and hot-probe method was utilized to characterize the CIS films. The key factor for preparing single-phase CuInSe2 is the proportion of CuCl, InCl3(DOT)4H2O and SeO2. The CIS films are nearly stoichiometry of CuInSe2 and polycrystalline on Mo- glass. The Cu excess films are p-type semiconductor, and the In excess films n-type. The deposition potential obviously affects the surface morphology of CIS films. AFM results had indicated that the CIS films on Mo-glass grow in layer and on SnO2 glass in island.
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Wenyi Li, Jian Yu, Xuebin Yu, Qiulong Chen, and Xun Cai "Preparation of CuInSe2 film with electrodeposition", Proc. SPIE 4086, Fourth International Conference on Thin Film Physics and Applications, (29 November 2000); https://doi.org/10.1117/12.408435
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