Preparation of zirconia thin films via sol-gel process from inorganic precursor

Jun Shen; Qinyuan Zhang; Jue Wang; Hongyan Lu; Tianhe Yang; Zhongsheng Deng; Bin Zhou; Lingyan Chen

doi:10.1117/12.408484

29 November 2000 Preparation of zirconia thin films via sol-gel process from inorganic precursor

Jun Shen, Qinyuan Zhang, Jue Wang, Hongyan Lu, Tianhe Yang, Zhongsheng Deng, Bin Zhou, Lingyan Chen

Author Affiliations +

Proceedings Volume 4086, Fourth International Conference on Thin Film Physics and Applications; (2000) https://doi.org/10.1117/12.408484
Event: 4th International Conference on Thin Film Physics and Applications, 2000, Shanghai, China

Abstract

ZrO₂ thin films were prepared by sol-gel technology from suitable zirconia aqueous colloidal suspensions containing nano-crystalline ZrO₂ at room temperature synthesized by hydrothermal process from inorganic precursor (ZrOCl₂ (DOT) 8 H₂O). By adding a soluble organic binder PVP to the suspension prior to application, it substantially increased the coating refractive index and the abrasion- resistance as well as the laser damage threshold. The features of the coatings and the colloidal suspensions were investigated. Multilayer highly reflective dielectric coatings were also elaborated by laying down quarterwave- thick alternating coatings of the binder-aided zirconia and silica, which was prepared with the sol-gel process from TEOS. Laser damage thresholds of 20 and 18 J/cm² (1064 nm, 1 ns) were achieved for single ZrO₂-PVP coating and ZrO₂-PVP/SiO₂ multilayers respectively.

Citation Download Citation

Jun Shen, Qinyuan Zhang, Jue Wang, Hongyan Lu, Tianhe Yang, Zhongsheng Deng, Bin Zhou, and Lingyan Chen "Preparation of zirconia thin films via sol-gel process from inorganic precursor", Proc. SPIE 4086, Fourth International Conference on Thin Film Physics and Applications, (29 November 2000); https://doi.org/10.1117/12.408484

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