29 November 2000 Properties of gallium phosphide films prepared by rf magnetron sputtering
Author Affiliations +
Proceedings Volume 4086, Fourth International Conference on Thin Film Physics and Applications; (2000) https://doi.org/10.1117/12.408399
Event: 4th International Conference on Thin Film Physics and Applications, 2000, Shanghai, China
Abstract
As a coating material with excellent durability in 8 - 12 micrometers waveband, GaP films can be used as anti-reflective and protective layers on the windows and domes of ZnS, ZnSe and Ge. In this paper GaP films have been deposited by radio frequency magnetron sputtering of single crystalline gallium phosphide. The deposition rate, composition, structure, hardness and optical properties of GaP films have been investigated, and it's application used as anti-reflective and protective films on ZnS substrate has also been studied.
© (2000) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Jianquan Song, Jianquan Song, Zhengtang Liu, Zhengtang Liu, Dagang Guo, Dagang Guo, Zhongqi Yu, Zhongqi Yu, Dongsheng Geng, Dongsheng Geng, Xiulin Zheng, Xiulin Zheng, } "Properties of gallium phosphide films prepared by rf magnetron sputtering", Proc. SPIE 4086, Fourth International Conference on Thin Film Physics and Applications, (29 November 2000); doi: 10.1117/12.408399; https://doi.org/10.1117/12.408399
PROCEEDINGS
4 PAGES


SHARE
Back to Top